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Observation of Dislocation Microstructures and Simulation of Stress Field during Fatigue Crack Initiation in a Copper Single Crystal

机译:铜单晶疲劳裂纹萌生过程中位错组织的观察及应力场的模拟

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How a crack initiates from the smooth surface of single crystals subjected to uniaxial cyclic loading is unclear. Experiments were conducted to observe in detail the dislocation microstructures during the saturation stage of cyclic deformation in a copper single crystal using scanning electron microscopy and the electron channeling contrast (SEM-ECC) technique. Some dark zones were found in the dislocation microstructures, which were located either at the edge region of the specimen or within the persistent slip bands (PSBs) at the matrix/PSB interfaces. Hence, fatigue cracks will initiate at these sites with high stress concentrations, i.e., the dark zones. Also, dislocation dynamics (DD) simulation was adopted to calculate internal stress distributions induced by dislocations, and finite element analysis (FEA) used to obtain stress distribution at the matrix/PSB interfaces and neighboring micro-regions caused by an externally applied load. Simulation results show that the external shear stresses distribute uniformly in all specimens; while near the free-surface regions, the maximum value of internal stresses not only occurs at interfaces between PSBs and dislocation matrix, but also at locations where these interfaces cross the free-surface. Consequently, the interfaces are most probable sites for nucleated cracks. Finally, the simulation results agree well with experimental observations.
机译:尚不清楚如何从经受单轴循环载荷的单晶光滑表面引发裂纹。利用扫描电子显微镜和电子通道对比度(SEM-ECC)技术,进行了实验,以详细观察铜单晶中循环变形饱和阶段的位错微观结构。在位错微结构中发现了一些暗区,它们位于样品的边缘区域或位于基体/ PSB界面的永久滑移带(PSB)内。因此,疲劳裂纹将在具有高应力集中的这些位置即暗区处开始。此外,采用位错动力学(DD)模拟来计算由位错引起的内部应力分布,并使用有限元分析(FEA)来获得由外部施加的载荷引起的矩阵/ PSB界面和相邻微区的应力分布。仿真结果表明,外部剪应力在所有试件中均匀分布。当靠近自由表面区域时,内部应力的最大值不仅出现在PSB和位错矩阵之间的界面上,而且出现在这些界面与自由表面交叉的位置。因此,界面是最有可能出现形核裂纹的位置。最后,仿真结果与实验结果吻合良好。

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