机译:量子和尺寸效应的背后:断裂键诱导的局部应变和趋肤深度的电荷和能量的量子陷阱
Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai 200062 China;
rnInstitute of High Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore 138632, Singapore;
rnSchool of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore;
rnSchool of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore Key Laborastory of Low-dimensional Materials and Application Technolgies, Institute of Quantum Enginering and Moicro-Nano Energy technology, and Faculity of Science, Xiangtan University, Changsha 411105, China;
nanostructure; surface; chemical bond; hamiltonian; atomic cohesive energy; size effect; mechanical strength; phase transition; photoluminecscence; phtoabsorption; lattice dynamics; BOLS theory;
机译:Ni纳米团簇在SiO_2载体上的尺寸依赖性2p_(3/2)结合能位移:趋肤深度局部应变和量子阱
机译:Rh和Pd表面的取向分辨3d_(5/2)结合能位移:趋肤深度晶格应变的各向异性和量子阱
机译:配位不足的原子在W阶跃表面上引起局部应变,量子阱陷落和化合价极化
机译:寄生MOSFET和陷阱对锗量子点单电子/空穴晶体管电荷传输特性的影响。
机译:量子点-多巴胺共轭物中的电荷转移相互作用:缓冲液pH,QD大小和分离距离的影响
机译:可逆电荷载流子陷阱减慢了福斯特CdSe / CdS量子点固体中的能量转移
机译:pd,Cu和pd-Cu纳米粒子中的电荷转移,晶格畸变和量子限制效应;尺寸和合金化诱导结合能的修饰