Growth of and optical emission from GaMnAs thin films grown by molecular beam epitaxy

摘要

GaMnAs thin films with different Mn doping concentrations were grown via molecular beam epitaxy using a substrate temperature of 250℃. The thin films were investigated using photoluminescence (PL) measurements from 8 to 300 K. Transitions involving Mn acceptors were identified and a binding energy of ～0.1 eV was found. A Mn doping concentration dependent PL spectrum was found to lend insight into the film quality at a local level. Temperature dependent PL studies show that the doping related emissions drop faster in energy than other peaks with increasing temperature, indicating that they are more sensitive to changes in the surrounding environment.