Mesa structures of GaAs fabricated by nanoparticle mask under gas-cluster ion-beam irradiation

摘要

Electron, ultraviolet (UV) light, x ray, and ion beam have been widely used to perform microfabrication of surfaces in various materials. Electron beam, UV light, and x ray are useful in lithography using resist materials. The lithographic method permits precise patterning but it requires many process steps. In contrast, ion-beam irradiation directly machines and patterns materials. Focused ion beam (FIB) is a powerful method for high-resolution patterning, but it takes a long time to pattern large areas. Furthermore conventional ion-beam (monomer ion beam) irradiation induces damage. Microfabrication is of scientific and practical concern and it is useful to develop a method for high throughput and low damage.