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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Microelectromechanical system microhotplates for reliability testing of thin films and nanowires
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Microelectromechanical system microhotplates for reliability testing of thin films and nanowires

机译:用于薄膜和纳米线可靠性测试的微机电系统微热板

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Microelectromechanical system microhotplates fabricated using silicon-on-insulator wafers were designed and fabricated for accelerated lifetime testing of thin films and nanowires. Thin films of Cr/Ru/Au, Cr/Ru, and Ru were examined as well as nanowires of Ru and RuO_x. Rapid thermal cycling at a 1 kHz pulse frequency was employed for testing the thin films. Nanowires were characterized using 1 kHz and 500 Hz pulse frequencies. A 40 nm layer of sputtered Au deposited on 12 nm of sputtered Ru and 8 nm of sputtered Cr displayed a sheet resistance of 1.18 Ω/□ and a lifetime of 267 h before failure when cycled with a peak temperature of 692 K. Ru thin films with a thickness of 12 nm displayed a sheet resistance of 51 Ω/□ and a lifetime of 10 h under the same conditions. Sputtered Ru and RuO_x nanowires with thicknesses of 15 and 32 nm, respectively, displayed resistivities of 72 X 10~(-8) and 320 × 10~(-8) Ω m. It was found that the cycling frequency did not influence the nanowire lifetimes in air or in N_2. Ru nanowires tested in N_2 displayed lifetimes of 450 min followed by Ru nanowires tested in air with lifetimes of 340 min and finally by RuO_x. nanowires tested in air with lifetimes of 45 min. This latter behavior is attributed to a higher surface diffusion in RuO_x. compared to Ru. An activation energy of 0.29 eV was observed for failure of Ru nanowires tested in air conditions. Biased percolating behavior with critical exponents ranging from 0.5 to 0.7 was found to describe the electrical behavior for all the nanowires.
机译:设计并制造了使用绝缘体上硅晶片制造的微机电系统微热板,用于加速薄膜和纳米线的寿命测试。研究了Cr / Ru / Au,Cr / Ru和Ru薄膜以及Ru和RuO_x的纳米线。采用1 kHz脉冲频率的快速热循环来测试薄膜。纳米线使用1 kHz和500 Hz脉冲频率进行表征。当以692 K的峰值温度循环时,沉积在12 nm的溅射Ru和8 nm的溅射Cr上的40 nm溅射Au层的薄层电阻为1.18Ω/□,寿命为267 h。厚度为12 nm的薄膜在相同条件下的薄层电阻为51Ω/□,寿命为10 h。溅射的Ru和RuO_x纳米线的厚度分别为15和32 nm,显示的电阻率为72 X 10〜(-8)和320×10〜(-8)Ωm。发现循环频率不影响空气或N_2中的纳米线寿命。在N_2中测试的Ru纳米线的寿命为450分钟,随后在空气中测试的Ru纳米线的寿命为340 min,最后是RuO_x。纳米线在空气中测试的寿命为45分钟。后一种行为归因于RuO_x中较高的表面扩散。比起汝。对于在空气条件下测试的Ru纳米线的失效,观察到活化能为0.29 eV。发现偏置指数在0.5到0.7范围内的偏斜渗漏行为描述了所有纳米线的电行为。

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