Deconvolution analyses of secondary ion mass spectrometry shallow depth profiles with depth resolution functions from silicon substrate-based delta-doped samples

摘要

Delta-doped samples were fabricated by electron beam deposition at less than 50 ℃ to obtain ideal delta-doped samples. Depth resolution functions for boron in silicon were evaluated by secondary ion mass spectrometry (SIMS) analysis in order to perform deconvolution analysis of the SIMS depth profiles. The decay length of the depth resolution function obtained under 150 eV primary oxygen ion bombardment is thought to be one of the best values reported to date. Deconvolution analysis of the shallow boron depth profiles was performed using depth resolution functions. The deconvolution results for the shallow depth profiles, which were measured with primary oxygen ions of different energies, showed considerable coincidence, indicating that deconvolution analysis was performed successfully and that the depth resolution functions had a high degree of accuracy.