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首页> 外文期刊>Journal of Vacuum Science & Technology >High transmission pellicles for extreme ultraviolet lithography reticle protection
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High transmission pellicles for extreme ultraviolet lithography reticle protection

机译:高透射防护膜,用于极紫外光刻掩模版保护

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摘要

The authors present the results of a full-field extreme ultraviolet (EUV) pellicle for reticle protection and defect mitigation. Based on novel microelectromechanical systems based fabrication, it comprises a 50 nm Si membrane attached to a wire-grid. Two types of pellicle fabrication techniques are described. The authors present the first actinic results of extreme ultraviolet lithography reticle with pellicle exposed on IMEC Advanced Demo Tool. The impact of different pellicle types on imaging is evaluated as a function of pellicle standoff distance and mesh geometry. A new prototype pellicle has been developed with a measured transmission of 82% in EUV. Actinic exposures are complemented with aerial image modeling, thermal analysis, vacuum cycling, resist outgas tests, and >5 g repeated scan cycle robustness tests.
机译:作者介绍了用于标线片保护和减轻缺陷的全视场极紫外(EUV)防护膜的结果。基于新颖的基于微机电系统的制造,它包括连接到线栅的50 nm Si膜。描述了两种类型的防护膜制造技术。作者介绍了在IMEC Advanced Demo Tool上曝光过防护膜的极紫外光刻掩模版的第一个光化结果。评估不同防护膜类型对成像的影响,作为防护膜间隔距离和网格几何形状的函数。已开发出一种新的原型防护膜,在EUV中测得的透射率为82%。光化曝光通过航拍图像建模,热分析,真空循环,抗蚀剂脱气测试和大于5 g的重复扫描周期耐用性测试得到补充。

著录项

  • 来源
    《Journal of Vacuum Science & Technology》 |2010年第6期|p.C6E36-C6E41|共6页
  • 作者单位

    Intel Corporation, Santa Clara, California 95054;

    Intel Corporation, Santa Clara, California 95054;

    Intel Corporation, Santa Clara, California 95054;

    Lawrence Berkeley National Laboratory, Berkeley, California 94720;

    Lawrence Berkeley National Laboratory, Berkeley, California 94720;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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