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首页> 外文期刊>Journal of Vacuum Science & Technology >Actinic imaging and evaluation of phase structures on extreme ultraviolet lithography masks
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Actinic imaging and evaluation of phase structures on extreme ultraviolet lithography masks

机译:极紫外光刻掩模上的光化成像和相结构评估

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摘要

The authors describe the implementation of a phase-retrieval algorithm to reconstruct the phase and complex amplitude of structures on extreme ultraviolet (EUV) lithography masks. Many native defects commonly found on EUV reticles are difficult to detect and review accurately because they have a strong phase component. Understanding the complex amplitude of mask features is essential for predictive modeling of defect printability and defect repair. Besides printing in a stepper, the most accurate way to characterize such defects is with actinic inspection, performed at the design, EUV wavelength. Phase defect and phase structures show a distinct through-focus behavior that enables qualitative evaluation of the object phase from two or more high-resolution intensity measurements. For the first time, the phase of structures and defects on EUV masks were quantitatively reconstructed based on aerial image measurements, using a modified version of a phase-retrieval algorithm developed to test optical phase shifting reticles.
机译:作者描述了一种相位检索算法的实现,该算法可在极紫外(EUV)光刻掩模上重建结构的相位和复振幅。由于EUV掩模版具有很强的相位成分,因此通常很难在EUV掩模版上发现许多天然缺陷。了解掩模特征的复杂幅度对于缺陷可印刷性和缺陷修复的预测建模至关重要。除了使用步进印刷之外,表征此类缺陷的最准确方法是在设计EUV波长下进行光化检查。相位缺陷和相位结构显示出独特的贯穿焦点行为,该行为可从两个或多个高分辨率强度测量结果中对对象相位进行定性评估。第一次,基于航空图像测量,使用开发用于测试光学相移掩模版的相变检索算法的改进版本,对EUV掩模上的结构和缺陷的相位进行了定量重建。

著录项

  • 来源
    《Journal of Vacuum Science & Technology》 |2010年第6期|p.C6E11-C6E16|共6页
  • 作者单位

    Lawrence Berkeley National Laboratory, Berkeley, California 94720;

    Lawrence Berkeley National Laboratory, Berkeley, California 94720;

    Samsung Electronics Co. Ltd., Ban-Wol, Hwasung, Kyunggi, Korea 445-701;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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