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机译:电子束光刻技术制备超高密度纳米点阵图形(〜3 Tbits / in.2)
Department of Materials Science and Engineering, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-742, South Korea;
Department of Materials Science and Engineering, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-742, South Korea;
Department of Materials Science and Engineering, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-742, South Korea;
Department of Materials Science and Engineering, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-742, South Korea;
University of Science and Technology, Daejon 305-350, South Korea;
Korea Institute of Machinery and Materials, Daejon 305-343, South Korea;
WCU Hybrid Materials Program and Department of Materials Science and Engineering, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-742, South Korea;
机译:使用无电沉积的纳米光刻基于纳米光刻的定期银和金纳多阵列制造
机译:紫外纳米压印光刻技术和电沉积用于高密度图案化介质的磁性纳米点阵列的制备
机译:使用金属玻璃制造具有2 Tdot / in。 2 sup>的纳米点阵列模具,用于纳米压印
机译:结合嵌段共聚物自组装和电子束光刻技术选择性图案化金属纳米点的制备
机译:激光干涉光刻技术,用于大面积构图和功能纳米结构的制造
机译:实际信息存储在铁电记录介质中记录密度为4 Tbit / in.2
机译:5 Tbit / in.2图案介质中低线边缘粗糙度引导图改进的自组装纳米点的排序