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机译:金辅助金属有机化学气相沉积形成InP纳米线的生长和光学性质:生长温度的影响
Key Laboratory of Information Photonics and Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China;
School of Electronics Science and Technology, Dalian University of Technology, Dalian 116024, China;
Key Laboratory of Information Photonics and Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China;
Key Laboratory of Information Photonics and Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China;
Key Laboratory of Information Photonics and Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China;
Key Laboratory of Information Photonics and Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China;
Key Laboratory of Information Photonics and Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China;
Key Laboratory of Information Photonics and Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China;
Key Laboratory of Information Photonics and Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China;
机译:金辅助金属有机化学气相沉积形成的砷化镓纳米线:生长温度的影响。
机译:生长温度对金属有机化学气相沉积生长高质量InP的光学和深层光谱的影响
机译:生长温度对金属有机化学气相沉积法生长的同轴In_xGa_(1-x)N / GaN纳米线的影响
机译:金辅助金属有机化学气相沉积形成的InP纳米线:生长温度的影响
机译:III-V族半导体纳米线阵列的生长和表征通过选择性区域金属有机化学气相沉积。
机译:金属有机化学气相沉积在InP(111)B上In(As)P纳米线的自催化生长和表征
机译:辅助金属有机化学气相沉积形成砷化镓纳米线:生长温度的影响
机译:嵌入In0.49(al(x)Ga(1-x))0.51p金属有机化学气相沉积Inp自组装量子点的性质。