Optimization of the ammonium sulfide (NH4)2S passivation process on InSb(111)A

摘要

The passivation of the InSb semiconductor surface and related alloys is of interest due to their small bandgaps and high bulk mobilities, which make them favorable materials for use in quantum-well transistors and long wavelength optoelectronic devices. One of the most common passivation approaches is an ammonium sulfide ((NH4)2S) treatment; however, there are variations in the reported processing conditions for this procedure. This study represents a broad review of the different sulfur treatment parameters used as well as determining the optimal processing parameters in terms of length of time the sample is in the solution and the (NH4)2S concentration, by measuring the level of the residual native oxides, and surface roughness, by means of x-ray photoelectron spectroscopy and atomic force microscopy, respectively.