Molecular beam epitaxial growth and characterization of strain-compensated Al_0.3In_0.7P/InP/Al_0.3In_0.7P metamorphic-pseudomorphic high electron mobility transistors on GaAs substrates

摘要

A novel metamorphic high electron mobility transistor (HEMT) structure was grown on GaAs substrates by solid-source molecular-beam epitaxy for potential microwave power applications. The HEMT device layers were strain compensated with pseudomorphic (tensile-strained) Al_0.3In_0.7P Donor-barrier layers and a pseudomorphic (Compressive-strained) InP channel layer.