Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices

摘要

The fundamental connection between electron stimulated desorption (ESD) of hydrogen (H)/ deuterium (D) at silicon surfaces in ultrahigh vacuum and hot-carrier-stimulated desorption of H/D at the oxide/silicon interfaces in complementary metal-oxide-semiconductor (CMOS) devices is presented. The dependences of device degradation on carrier energy and current density were studied on two generations of CMOS devices.