Pattern characterization of deep-ultraviolet photoresists by near-field infrared microscopy

摘要

Chemical contrast at subwavelength spatial resolution (λ/10) is achieved using a fiber-based, infrared near-field microscope, at 3 μm wavelength. Chemically amplified polymer photoresists (poly(t-butylmethacrylate)), patterned by ultraviolet radiation and 250 nm thick, are imaged using infrared (IR) wavelengths situated around the OH stretch band of the polymer a region sensitive to photochemical changes asociated with latent image formation