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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure >Predicting the thermomechanical distortion of extreme ultraviolet lithography reticles for preproduction and production exposure tools
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Predicting the thermomechanical distortion of extreme ultraviolet lithography reticles for preproduction and production exposure tools

机译:预测用于预生产和生产曝光工具的极紫外光刻掩模版的热机械变形

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摘要

The thermomechanical distortion of extreme ultraviolet lithography (EUVL) reticles during exposure may lead to significant image placement (IP) errors. As throughput requirements for high-volume manufacturing (HVM) increase, the necessary illumination power levels rise, resulting in further distortion of the reticle. The thermal response of the EUVL reticle is predicted using finite element models for a typical HVM exposure tool. The effect of increasing the EUV source power on reticle heating is investigated by comparing the thermal distortion expected in exposure tools using different throughput values corresponding to the α tool, β tool, and the HVM exposure tool (γ tool). The effect of imperfect contact between the EUVL reticle and the chuck surface on the IP errors due to thermal distortion is studied for different effective contact area ratios. Also, an alternative design concept is proposed, aimed at providing a solution to the microparticle trapping problem (between the reticle and the chuck).
机译:曝光过程中极端紫外光刻(EUVL)掩模版的热机械变形可能会导致显着的图像放置(IP)错误。随着大批量制造(HVM)的生产能力要求的提高,所需的照明功率水平也随之提高,从而导致光罩进一步变形。使用典型HVM曝光工具的有限元模型可以预测EUVL掩模版的热响应。通过比较使用不同曝光量值(分别对应于α工具,β工具和HVM曝光工具(γ工具))的曝光工具中预期的热变形,研究了提高EUV源功率对掩模版加热的影响。对于不同的有效接触面积比,研究了EUVL掩模版和卡盘表面接触不良对IP误差(由于热变形)的影响。另外,提出了替代设计概念,旨在提供一种解决微粒捕获问题的方法(在掩模版和卡盘之间)。

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