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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure >Generation mechanism of residual clamping force in a bipolar electrostatic chuck
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Generation mechanism of residual clamping force in a bipolar electrostatic chuck

机译:双极静电卡盘中残余夹持力的产生机理

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摘要

Clamping and residual clamping forces of a Johnsen-Rahbek-type (JR-type) bipolar electrostatic chuck (ESC), which has electrically independent dual electrodes, were measured. Area ratios of the ESC's two electrodes ranged from 1 to 4.6. It was found that the clamping force per unit area decreases with increasing area ratio and that the residual clamping force per unit area increases with increasing area ratio. To reveal the mechanism of residual clamping force, an equivalent circuit model of a JR-type bipolar ESC was devised. The model showed that the residual clamping force is caused by the residual charge that results from the charge difference in two monopolar ESCs. The charge difference is due to the resistance dependency on voltage of the dielectric layer of the ESC. The wafer voltage calculated from the model agreed well with the voltage measured by an electrostatic voltmeter. It can be concluded that the model is suitable for simulating the performance of a bipolar ESC.
机译:测量具有电独立双电极的Johnsen-Rahbek型(JR型)双极静电吸盘(ESC)的夹紧力和残余夹紧力。 ESC的两个电极的面积比在1到4.6之间。已经发现,单位面积的夹紧力随着面积比的增加而减小,并且单位面积的剩余夹紧力随着面积比的增加而增加。为了揭示残余夹紧力的机理,设计了JR型双极电调的等效电路模型。该模型表明,残余钳位力是由两个单极性ESC的电荷差异所导致的残余电荷引起的。电荷差异是由于电阻对ESC介电层电压的依赖性。由该模型计算出的晶片电压与静电伏特计测得的电压非常吻合。可以得出结论,该模型适合于模拟双极电调的性能。

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