High-resolution pattern generation using the epoxy novolak SU-8 2000 resist by electron beam lithography

摘要

We report the fabrication of high-resolution sub 50 nm patterns by electron beam lithography using the epoxy novolak SU-8 2000 resist formulation. The minimum linewidth achieved is on the order of 30 nm and corresponds to a threefold reduction in minimum linewidth over previous reports describing similar resist chemistries. Our results also show that it is possible to fabricate dense linear grating elements without proximity correction. The dry etch resistance of native SU-8 2000 was found to be nearly twice that of poly(methylmethacrylate), making it ideal for applications that require pattern transfer. These studies are intended to explore the feasibility of SU-8 2000 as an electron beam resist for pattern generation on length scales below 50 nm.