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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Synthesis of tin-incorporated nanocomposite diamond like carbon films by plasma enhanced chemical vapor deposition and their characterization
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Synthesis of tin-incorporated nanocomposite diamond like carbon films by plasma enhanced chemical vapor deposition and their characterization

机译:等离子体增强化学气相沉积法合成掺锡纳米复合类金刚石碳膜及其表征

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摘要

Sn-incorporated nanocomposite diamond like carbon (DLC) films were synthesized using direct current plasma enhanced chemical vapor deposition method. The precursor gas used was acetylene. For Sn incorporation, SnCl_2·2H_2O dissolved in methanol was used. Fourier-transform infrared spectroscopy measurements showed different vibrational modes of tetrahedrally bonded carbon and also some small peaks due to Sn—C bonding vibrations. Transmission electron microscopy image and electron diffraction patterns also confirmed the incorporation of nanocrystalline Sn particles into the amorphous DLC matrix. Due to the presence of Sn clusters, the Tauc gap of the films decreased sharply, compared to the intrinsic material. It was found that the resistivity of Sn-incorporated DLC films decreased drastically (by eight orders of magnitude) compared to the undoped DLC film. Also, the films exhibited good field emission properties at a lower turn-on field.
机译:采用直流等离子体增强化学气相沉积法合成了掺锡的纳米复合金刚石样碳膜(DLC)。所用的前体气体是乙炔。对于Sn掺入,使用溶解在甲醇中的SnCl_2·2H_2O。傅立叶变换红外光谱测量结果显示,四面体键合碳的振动模式不同,并且由于Sn-C键合振动而出现一些小峰。透射电子显微镜图像和电子衍射图样也证实了将纳米晶Sn颗粒掺入非晶DLC基质中。由于存在锡团簇,与本征材料相比,薄膜的Tauc间隙急剧减小。发现与未掺杂的DLC膜相比,掺Sn的DLC膜的电阻率急剧降低(降低了八个数量级)。而且,该膜在较低的开启场中表现出良好的场发射特性。

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