Actinic inspection of extreme ultraviolet programed multilayer defects and cross-comparison measurements

摘要

The production of defect-free mask blanks remains a key challenge for extreme ultraviolet (EUV) lithography. Integral to this effort is the development and characterization of mask inspection tools that are sensitive enough to detect critical defects with high confidence. Using a single programed-defect mask with a range of buried bump-type defects, the authors report a comparison of measurements made in four different mask inspection tools: one commercial tool using 488 nm wavelength illumination, one prototype tool that uses 266 nm illumination, and two noncommercial EUV "actinic" inspection tools. The EUV tools include a dark field imaging microscope and a scanning microscope. Their measurements show improving sensitivity with the shorter wavelength non-EUV tool, down to 33 nm spherical-equivalent-volume diameter, for defects of this type. Measurements conditions were unique to each tool, with the EUV tools operating at a much slower inspection rate. Several defects observed with EUV inspection were below the detection threshold of the non-EUV tools. (c) 2006 American Vacuum Society.