Alkyl-Substituted Selenium-Bridged V-Shaped Organic Semiconductors Exhibiting High Hole Mobility and Unusual Aggregation Behavior

摘要

Toward the development of high-performance organic semiconductors (OSCs), carrier mobility is the most important requirement for next-generation OSC-based electronics. The strategy is that OSCs consisting of a highly extended π-electron core exhibit two-dimensional (2D) aggregated structures to offer effective charge transport. However, such OSCs, in general, show poor solubility in common organic solvents, resulting in limited solution processability. This is a critical trade-off between the development of OSCs with simultaneous high carrier mobility and suitable solubility. To address this issue, herein, five-membered ring-fused selenium-bridged V-shaped binaphthalene with decyl sub-stituents (C_(10)-DNS-VW) is developed and synthesized by an efficient method. C_(10)-DNS-VW exhibits significantly high solubility for solution processes. Notably, C_(10)-DNS-VW forms a one-dimensional π-stacked packing motif (ID motif) and a 2D herringbone (HB) packing motif (2D motif), depending on the crystal growth condition. On the other hand, the F_(ab)rication of thin films by means of both solution process and vacuum deposition techniques forms only the 2D HB motif. External stress tests such as heating and exposure to solvent vapor indicated that ID and 2D motifs could be synergistically induced by the total balance of intermolecular interactions. Finally, the single-crystalline films of C_(10)- DNS-VW by solution process exhibit carrier mobility up to 11 cm~2 V~(-1) s~(-1) with suitable transistor stability under ambient conditions for more than two months, indicating that C_(10)-DNS-VW is one of the most promising candidates for breaking the trade-off in the field of solution-processed technologies.