Low-Temperature Growth of Single-Walled Carbon Nanotubes by Water Plasma Chemical Vapor Deposition

摘要

Due to unique one-dimensional structures with adjustable and ballistic electronic conductivity, single-walled carbon nanotubes (SWNTs) have been intensively investigated as an alternate material to replace the current silicon-based field effect transistors (FETs). To fabricate nanotube-based FETs, SWNTs must be grown without multi-walled carbon nanotubes (MWNTs) and carbonaceous impurities. However, the growth of SWNTs is generally accompanied by the undesired carbon materials, especially during the chemical vapor deposition (CVD) process, which is the preferred growth method of nanotubes for integrated electronic devices.