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Modification of the Poly(bisdodecylquaterthiophene) Structure for High and Predominantly Nonionic Conductivity with Matched Dopants

机译:改性(双十二烷基四噻吩)结构的高和主要非离子电导率与匹配的掺杂剂

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摘要

Four p-type polymers were synthesized by modifying poly(bisdodecylquaterthiophene) (PQT12) to increase oxidizability by p-dopants. A sulfur atom is inserted between the thiophene rings and dodecyl chains, and/or 3,4-ethylenedioxy groups are appended to thiophene rings of PQT12. Doped with NOBF4, PQTS12 (with sulfur in side chains) shows a conductivity of 350 S cm~(-1), the highest reported nonionic conductivity among films made from dopant-polymer solutions. Doped with tetrafluorotetracyanoquinodimethane (F4TCNQ), PDTDE12 (with 3,4-ethylenedioxy groups on thiophene rings) shows a conductivity of 140 S cm~(-1). The converse combinations of polymer and dopant and formulations using a polymer with both the sulfur and ethylenedioxy modifications showed lower conductivities. The conductivities are stable in air without extrinsic ion contributions associated with PEDOT:PSS that cannot support sustained current or thermoelectric voltage. Efficient charge transfer, tighter π-π stacking, and strong intermolecular coupling are responsible for the conductivity. Values of nontransient Seebeck coefficient and conductivity agree with empirical modeling for materials with these levels of pure hole conductivity; the power factor compares favorably with prior p-type polymers made by the alternative process of immersion of polymer films into dopant solutions. Models and conductivities point to significant mobility increases induced by dopants on the order of 1-5 cm~2 V~(-1) s~(-1), supported by field-effect transistor studies of slightly doped samples. The thermal conductivities were in the range of 0.2-0.5 W m~(-1) K~(-1), typical for conductive polymers. The results point to further enhancements that could be obtained by increasing doped polymer mobilities.
机译:通过修饰聚(双十二烷基四噻吩)(PQT12)以增加p型掺杂剂的氧化性,合成了四种p型聚合物。将硫原子插入噻吩环和十二烷基链之间,和/或将3,4-乙二氧基附加到PQT12的噻吩环上。掺杂有NOBF4的PQTS12(侧链含硫)显示出350 S cm〜(-1)的电导率,这是由掺杂剂-聚合物溶液制成的薄膜中报道的最高非离子电导率。掺杂四氟四氰基喹二甲烷(F4TCNQ)的PDTDE12(在噻吩环上带有3,4-乙二氧基)显示出140 S cm〜(-1)的电导率。聚合物和掺杂剂的反向组合以及使用同时具有硫和乙二氧基改性的聚合物的配方显示出较低的电导率。电导率在空气中稳定,没有与PEDOT:PSS相关的外在离子贡献,后者无法支持持续的电流或热电电压。高效的电荷转移,更紧密的堆叠和强大的分子间耦合是导致电导率的原因。非瞬态塞贝克系数和电导率的值与具有这些纯空穴电导率水平的材料的经验模型一致。与通过将聚合物膜浸入掺杂剂溶液的替代方法制得的现有p型聚合物相比,功率因数具有优势。模型和电导率表明,由轻掺杂样品进行的场效应晶体管研究支持,掺杂剂引起的迁移率显着增加,约为1-5 cm〜2 V〜(-1)s〜(-1)。导热系数一般在0.2-0.5 W m〜(-1)K〜(-1)的范围内。结果表明可以通过增加掺杂的聚合物迁移率来获得进一步的增强。

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  • 来源
    《Journal of the American Chemical Society》 |2017年第32期|11149-11157|共9页
  • 作者单位

    Department of Materials Science and Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD, United States;

    Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, United States;

    Department of Materials Science and Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD, United States;

    Department of Materials Science and Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD, United States;

    Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, United States;

    Department of Materials Science and Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD, United States;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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  • 正文语种 eng
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