Nanoimprint lithography and future patterning for semiconductor devices

摘要

Nanoimprint lithography (NIL) has the potential capability of high resolution with critical dimension uniformity that is suited for patterning shrinkage, as well as providing a low cost advantage. However, the detectivity of NIL is an impediment to the practical use of the technology in semiconductor manufacturing. We have evaluated defect levels of NIL and have classified detectivity into three categories; nonfill defects, template defects, and plug defects. New materials for both the template and resist processes reduce these defects to practical levels. Electric yields Of NIL are also diSCUSSed.