Batch fabrication of nanopatterned graphene devices via nanoimprint lithography

摘要

Previous attempts to tune the electrical properties of large-scale graphene via nanopatterning have led to serious degradation of the key electrical parameters that make graphene a desirable material for electronic devices. We use thermal nanoimprint lithography to pattern wafer-scale graphene on a 4-in. wafer with prefabricated 25 mm~2 devices. The nanopatterning process introduces a modest decrease in carrier mobility and only a minor change in residual doping. Due to the rapid fabrication time of approximately 90 min per wafer, this method has potential for large-scale industrial production. The chemiresistive gas sensing response towards NO_2 was assessed in humid synthetic air and dry air, with devices showing a response to 50 ppb of NO_2 only when nanopatterned.