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Optimization of defect compensation for extreme ultraviolet lithography mask by covariance-matrix-adaption evolution strategy

机译:协方差矩阵自适应演化策略优化极紫外光刻掩模的缺陷补偿

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摘要

Background: Defect compensation is one of the enabling techniques for high-volume manufacturing using extreme ultraviolet lithography. Aim: The advanced evolution strategy algorithm based on covariance matrix adaption is applied to compensation optimization to improve the convergence efficiency and algorithm operability. Approach: The advanced algorithm optimizes the solution population by sampling from the self-adapted covariance matrix of mutation distribution. Results: Optimization simulations for three different masks validated the algorithm's advantage in convergence efficiency and searching ability compared with original differential evolution, evolution strategy, genetic algorithm (GA), and Nelder-Mead simplex method. The advanced algorithm employs fewer user-defined parameters and is proved to be robust to variations of these parameters. Conclusions: The advanced algorithm obtains better results compared with GA for best-focus, through-focus, and complex-pattern optimizations. With the inherent invariance property, appropriate operability, and robustness, we recommend applying this algorithm to other lithography optimization problems.
机译:背景:缺陷补偿是使用极限紫外光刻技术进行大批量生产的一项使能技术。目的:将基于协方差矩阵自适应的高级进化策略算法应用于补偿优化,以提高收敛效率和算法可操作性。方法:高级算法通过从自适应的变异分布的协方差矩阵中进行采样来优化求解种群。结果:与原始的差分进化,进化策略,遗传算法(GA)和Nelder-Mead单纯形法相比,针对三种不同掩模的优化仿真证明了该算法在收敛效率和搜索能力方面的优势。先进的算法使用较少的用户定义参数,并被证明对这些参数的变化具有鲁棒性。结论:与GA相比,先进算法在最佳聚焦,直通聚焦和复杂模式优化方面获得了更好的结果。具有固有的不变性,适当的可操作性和鲁棒性,我们建议将此算法应用于其他光刻优化问题。

著录项

  • 来源
    《Journal of microanolithography, MEMS, and MOEMS》 |2018年第4期|043505.1-043505.16|共16页
  • 作者单位

    Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, Laboratory of Information Optics and Opt-Electronic Technology, Shanghai, China,University of Chinese Academy of Sciences, Beijing, China;

    Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, Laboratory of Information Optics and Opt-Electronic Technology, Shanghai, China,University of Chinese Academy of Sciences, Beijing, China;

    Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, Laboratory of Information Optics and Opt-Electronic Technology, Shanghai, China,University of Chinese Academy of Sciences, Beijing, China;

    Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, Laboratory of Information Optics and Opt-Electronic Technology, Shanghai, China;

    Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, Laboratory of Information Optics and Opt-Electronic Technology, Shanghai, China,University of Chinese Academy of Sciences, Beijing, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    extreme ultraviolet lithography; mask optimization; defect compensation; evolution strategy; covariance-matrix-adaption;

    机译:极紫外光刻;遮罩优化;缺陷补偿;进化策略;协方差矩阵适应;
  • 入库时间 2022-08-18 04:16:35

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