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Contact damage initiation in silicon nitride in Hertzian indentation: role of microstructure

机译:赫兹压痕中氮化硅的接触损伤引发:微观结构的作用

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A bearing-grade silicon nitride with fine microstructure and a turbine-grade silicon nitride with coarse microstructure were studied with respect to the influence of their microstructures on (a) crack-growth-resistance behavior, (b) strength degradation due to Vickers indentation, and (c) crack initiation in quasi-static indentation with WC spheres. The turbine grade exhibited strong rising crack-growth resistance and less strength degradation due to Vickers indentation as compared to the bearing grade. Partial-ring or C cracks initiated in Hertzian indentation and the critical loads exhibited linear (Auerbach) variation with indenter radius above a critical value. For smaller radius, indentation plasticity preceded C-crack initiation. The bearing grade exhibited higher critical loads for C-crack initiation, but showed greater extension toward a ring crack than the turbine grade. These differences in crack initiation and growth were consistent with the differences in crack initiation and propagation toughness of the two grades. A ball-on-ball impact analysis was used to predict the critical velocities for initiating C cracks in the impact of silicon nitride surfaces with WC spheres.
机译:研究了具有微观组织的轴承级氮化硅和具有粗糙微观结构的涡轮级氮化硅,研究了它们的微观结构对(a)耐裂纹增长行为,(b)由于维氏压痕导致的强度降低, (c)WC球在准静态压痕中产生裂纹。与轴承等级相比,该涡轮等级表现出较强的抗裂纹扩展性,并且由于维氏压痕而导致的强度降低较小。在Hertzian压痕中产生的部分环或C裂纹和临界载荷在压头半径高于临界值时表现出线性(Auerbach)变化。对于较小的半径,压痕可塑性先于C裂纹引发。轴承等级显示出更高的C裂纹临界载荷,但与涡轮等级相比,向环形裂纹扩展的能力更大。裂纹萌生和扩展的这些差异与两个等级的裂纹萌生和扩展韧性的差异是一致的。球对球的冲击分析用于预测在WC球对氮化硅表面的冲击中引发C裂纹的临界速度。

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