首页> 外文会议>Eco-Materials Processing and Design VIII; Materials Science Forum; vols.544-545 >Hertzian Indentation Damage Behavior of Highly Porous Silicon Nitrides
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Hertzian Indentation Damage Behavior of Highly Porous Silicon Nitrides

机译:多孔氮化硅的赫兹压痕损伤行为

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Highly porous Si_3N_4 ceramics in service are usually subjected to continuous impact of solid particles which may give rise to localized damage and consequently to strength degradation. Hertzian indentation and three-point bending tests were conducted to investigate the contact damage behavior of highly porous Si_3N_4 ceramics in this paper. The Hertzian indentation damage morphologies were examined by using a bonded-interface technique. As a result of intragranular microfracture under Hertzian indentation, a distributed subsurface damage region is developed beneath the indenter. It was shown that, with increasing indentation load, the damage region extends progressively and a quasi-plastic stress-strain response exhibits. Failure sources were observed to be Hertzian indentation sites in three-point bending tests, leading to a gradual strength degradation.
机译:在使用中的高度多孔的Si_3N_4陶瓷通常会受到固体颗粒的连续冲击,这可能会引起局部损坏并因此导致强度降低。进行了赫兹压痕和三点弯曲试验,以研究高度多孔的Si_3N_4陶瓷的接触损伤行为。通过使用键合界面技术检查了赫兹压痕损伤形态。由于在Hertzian压痕作用下的晶粒内微裂纹,在压头下方形成了一个分布的地下损伤区域。结果表明,随着压痕载荷的增加,损伤区域逐渐扩大,并表现出准塑性应力应变响应。在三点弯曲试验中,观察到破坏源为赫兹压痕,导致强度逐渐降低。

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