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Oxygen vacancies induced variations in structural, optical and dielectric properties of SnO_2/graphite nanocomposite

机译:氧空位诱导SnO_2 /石墨纳米复合材料结构,光学和介电性能的变化

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摘要

Oxygen vacancies (O.Vs) play vital role in tailoring structural, optical and dielectric properties of nanostructures. Here we prepared SnO_2/graphite (SG) nanocomposite by growing SnO_2 nanoparticles on graphite sheets via hydrothermal method. Enhanced dielectric behavior due to increase in the oxygen vacancies (O.Vs) has been observed in SnO_2/graphite (SG) nanocomposite synthesized. To reveal the underlying origin here, we investigated the structural, morphological, optical, electrochemical and dielectric properties. The growth of SnO_2 NPs on graphite sheets resulted in small-sized NPs (Average size 10.89 ± 0.24 nm) inducing stresses in the structure causing large defect density (O.Vs). The formation of SG nanocomposite has been validated via SEM, TEM, EDX and FTIR. EDX, XPS and Photoluminescence (PL) spectra of SG nanocomposite manifest the presence of large oxygen vacancies (O.Vs). It is revealed that the bandgap of the host material SnO_2 (from ultra violet to the visible window) can be engineered by controlling the assimilation of SnO_2 NPs on GNs. SG nanocomposite exhibits reversible redox process with high anodic and cathodic currents, low internal (0.47 Q) and charge transfer (4.08 Q) resistances, correspondingly, low voltage drop (IR) 0.56 V and high capacitance 54.8 F/g. Variations in dielectric constant (ε), dielectric loss (ε") and conductivity (σ_(ac)) are attributed to the increased concentration of O.Vs and introduction of conductive carbon (graphite). The variations in dielectric properties are attributable to Maxewell-Wagner interfacial polarization and hopping process.
机译:氧气空缺(O.VS)在纳米结构的剪裁结构,光学和介电性质中起重要作用。在这里,我们通过水热法在石墨片上生长SnO_2纳米颗粒来制备SnO_2 /石墨(SG)纳米复合材料。在SnO_2 /石墨(SG)纳米复合材料中已经观察到由于氧空位(O.Vs)增加而导致的介电行为增强。为了揭示在此处的潜在来源,我们研究了结构,形态,光学,电化学和介电性能。石墨板上SnO_2 NP的生长导致小尺寸的NPS(平均尺寸为10.89±0.24nm),诱导造成大缺损密度(O.Vs)的结构中的应力。 SG纳米复合材料的形成已通过SEM,TEM,EDX和FTIR验证。 SG纳米复合材料的EDX,XPS和光致发光(PL)光谱表现出大氧空位(O.VS)的存在。据透露,通过控制GNS上的SnO_2 NPS的同化,可以设计主体材料SnO_2的带隙(来自Ultra violet到可见窗口)。 SG纳米复合材料表现出具有高阳极和阴极电流的可逆氧化还原过程,低内部(0.47 Q)和电荷转移(4.08 Q)电阻,相应地,低压降(IR)0.56V和高电容54.8 F / g。介电常数(ε),介电损耗(ε“)和电导率(σ_(AC))的变化归因于o.vs浓度的增加和导电碳的引入(石墨)。电介质属性的变化属于maxewell -Wagner界面极化和跳跃过程。

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  • 来源
    《Journal of materials science》 |2021年第2期|1402-1412|共11页
  • 作者单位

    School of Material Science Engineering Jiangsu University Zhenjiang 212013 China Department of Physics Abdul Wall Khan University Mardan KP 23200 Pakistan;

    School of Material Science Engineering Jiangsu University Zhenjiang 212013 China;

    School of Material Science Engineering Jiangsu University Zhenjiang 212013 China Department of Physics University of Lakki Marwat Lakki Marwat KP 28420 Pakistan;

    Department of Physics Abdul Wall Khan University Mardan KP 23200 Pakistan;

    Department of Physics Abdul Wall Khan University Mardan KP 23200 Pakistan;

    Department of Physics Abdul Wall Khan University Mardan KP 23200 Pakistan;

    School of Material Science Engineering Jiangsu University Zhenjiang 212013 China;

    Department of Physics University of Peshawar Peshawar KP Pakistan;

    School of Material Science Engineering Jiangsu University Zhenjiang 212013 China;

    School of Material Science Engineering Jiangsu University Zhenjiang 212013 China;

    Department of Physics Kohat University of Science & Technology Kohat KPK 26000 Pakistan;

    Department of Physics Islamia College Peshawar Peshawar Pakistan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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