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Radiation damage of SiC Schottky diodes by electron irradiation

机译:电子辐照对SiC肖特基二极管的辐射损伤

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The impact of radiation damage on the device performance of 4H-SiC Schottky diodes, which are irradiated at room temperature with 2-MeV electrons is studied. After irradiation the reverse current increases, while the forward current and the capacitance decrease with barrier height and carrier density. The decrease of the barrier height is mainly responsible for the increase of the reverse current, while the decrease of the forward current for a high fluence is caused by the increase of the resistance in the bulk of the crystal. Although no electron capture levels are observed before irradiation, three electron capture levels (E-1, E-2, and E-3) are induced after irradiation. It is noted that the decrease in carrier density is partly caused by the contribution of non-observed electron capture level in the DLT spectrum, which compensates the free carriers. (C) 2005 Springer Science + Business Media, Inc.
机译:研究了辐射损伤对4H-SiC肖特基二极管器件性能的影响,该二极管在室温下被2-MeV电子辐照。辐照后,反向电流增加,而正向电流和电容随势垒高度和载流子密度而减小。势垒高度的减小主要是造成反向电流增加的原因,而高通量的正向电流的减小则是由晶体主体中电阻的增加引起的。尽管在辐射之前未观察到电子捕获水平,但是在辐射后会诱导出三个电子捕获水平(E-1,E-2和E-3)。注意,载流子密度的降低部分是由于DLT光谱中未观察到的电子捕获能级的贡献所致,从而补偿了自由载流子。 (C)2005年Springer Science + Business Media,Inc.

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