Dislocation of high quality P-doped ZnTe substrate examined by X-ray topography

摘要

Transmission X-ray topograph was successfully observed in a high quality P-doped ZnTe substrate (100). The dislocation density was estimated to be approximately 7000 cm(-2). This value was smallest in the ZnTe substrate. Both peak energies in the photoluminescence spectra were the same in the dislocation and no-dislocation areas. However, the intensity of the free-to-acceptor emission in the dislocation area was larger than that in the no-dislocation area. It was found that the majority of the phosphor impurities existed in the dislocation areas. (C) 2005 Springer Science + Business Media, Inc.