Effect of temperature on thermally induced defects in silicon

摘要

Deep level transient spectroscopy has been used to study thermally activated defects in silicon. It has been observed that different annealing temperatures activate different defects in silicon, which were lying on inactive sites before annealing. Two deep mid-gap levels at energy positions E_c-0.48 eV and E_c -0.55 eV were found to be introduced by different heat treatments. It is also noted that heat treatment at 1,250 ℃ suppresses the concentration of deep level at E_c -0.23 eV and enhances the concentration of deep level at E_c -0.25 eV, while heat treatment at 950℃ has an opposite effect. Annealing response of the level at E_c -0.48 eV is found different to the annealing response of the level at E_c -0.55 eV which suggests them two different levels.