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Fabrication, dielectric and ferroelectric properties of Ba_(0.6)Sr_(0.4)TiO_3 film with preferred orientation

机译:择优取向的Ba_(0.6)Sr_(0.4)TiO_3薄膜的制备,介电和铁电性能

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摘要

Ba_(0.6)Sr_(0.4)TiO_3 films were fabricated by RF magnetron sputtering method. The X-ray diffraction (XRD) showed that the preferred orientation of films growing on platinum Si substrates can be tailored by sputtering pressure. The processing parameters such as sputtering pressure and substrate temperature were optimized to obtain a developed perovskite film with (110) preferred orientation. The polarization hysteresis loops and permittivity-voltage curves of the (110)-oriented film have been investigated,which demonstrated that the film is in ferroelectric phase at room temperature. Besides, it had excellent fatigue properties without polarization reduction after about 1010 switch cycles, and showed low leakage current (10~(-9)-10~(-7) A/cm~2) within an applied voltage of 5 V. Finally, the leakage current mechanism was studied.
机译:采用射频磁控溅射法制备了Ba_(0.6)Sr_(0.4)TiO_3薄膜。 X射线衍射(XRD)表明,可以通过溅射压力来定制在铂Si衬底上生长的膜的优选取向。优化诸如溅射压力和衬底温度的处理参数,以获得具有(110)优选取向的显影钙钛矿膜。研究了(110)取向薄膜的极化磁滞回线和介电常数-电压曲线,表明该薄膜在室温下呈铁电相。此外,它具有优异的疲劳性能,在大约1010个开关周期后仍不会极化减弱,并且在5 V的施加电压下显示出低漏电流(10〜(-9)-10〜(-7)A / cm〜2)。 ,研究了漏电流的机理。

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  • 来源
    《Journal of materials science》 |2011年第8期|p.1033-1039|共7页
  • 作者单位

    Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074 Wuhan, China;

    Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074 Wuhan, China;

    Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074 Wuhan, China;

    Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074 Wuhan, China;

    Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074 Wuhan, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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