机译:择优取向的Ba_(0.6)Sr_(0.4)TiO_3薄膜的制备,介电和铁电性能
Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074 Wuhan, China;
Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074 Wuhan, China;
Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074 Wuhan, China;
Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074 Wuhan, China;
Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074 Wuhan, China;
机译:溶胶-凝胶法制备Ba_(0.6)Sr_(0.4)TiO_3薄膜的取向依赖性微波介电性能
机译:取向硅对集成Ba_(0.6)Sr_(0.4)TiO_3薄膜的频率捷变器件微波介电性能的影响
机译:使用Pb_(0.3)Sr_(0.7)TiO_3缓冲层的Ba_(0.6)Sr_(0.4)TiO_3薄膜的介电性能
机译:在Si(100)衬底上具有外延MgO缓冲层的Ba_(0.6)Sr_(0.4)SR_(0.4)TiO_3薄膜的优选取向生长
机译:外延氮化钛/氮化铌和钒(0.6)铌(0.4)氮化物(0.4)/氮化铌超晶格薄膜的成核,结构和力学性能
机译:无铅电子陶瓷的介电电导和铁电性能:0.6Bi(Fe0.98Ga0.02)O3-0.4BaTiO3
机译:使用聚酰亚胺和Ba_ <0.4> Sr_ <0.6> Ti _,<0.96> O_3栅绝缘体制造C_ <60>场效应晶体管
机译:具有各种应变状态的ba(0.6)sr(0.4)tio(3)薄膜的介电性能