BST thin film; MgO buffer layer; sol-gel; MOCVD;
机译:Si(100)衬底上具有外延MgO缓冲层的Ba_(0.6)Sr_(0.4)TiO_3薄膜的优选取向生长
机译:Si(100)衬底上具有外延MgO缓冲层的Ba_(0.6)Sr_(0.4)TiO_3薄膜的优选取向生长
机译:(100)LaAlO_3和(100)MgO单晶衬底上生长的Ba_(0.6)Sr_(0.4)TiO_3薄膜的微波介电性能比较
机译:在Si(100)衬底上具有外延MgO缓冲层的Ba_(0.6)Sr_(0.4)SR_(0.4)TiO_3薄膜的优选取向生长
机译:外延氮化钛/氮化铌和钒(0.6)铌(0.4)氮化物(0.4)/氮化铌超晶格薄膜的成核,结构和力学性能
机译:(100)/(001)取向四方外延Pb(Zr0.4Ti0.6)O3薄膜在电场作用下超快90°域转换的原位观察
机译:使用LixNi2-xO缓冲层在MgO衬底上生长的Sr0.6Ba0.4Nb2O6外延薄膜的电光特性
机译:srTiO(sub 3)(100)上的外延pb(Zr(sub x)Ti(sub 1(minus)x))O(sub 3)/ srRuO(sub 3)(x = 0,0.35,0.65)多层薄膜通过mOCVD和RF溅射制备mgO(100)和mgO(100)