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机译:高温AlGaN缓冲层厚度对在Si(111)衬底上生长的GaN外延层的影响
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, China;
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, China,Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors, Chinese Academy of Sciences,P.O. Box 912, 100083 Beijing, China;
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, China;
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, China,Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors, Chinese Academy of Sciences,P.O. Box 912, 100083 Beijing, China;
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, China,Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors, Chinese Academy of Sciences,P.O. Box 912, 100083 Beijing, China;
Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors, Chinese Academy of Sciences,P.O. Box 912, 100083 Beijing, China;
Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors, Chinese Academy of Sciences,P.O. Box 912, 100083 Beijing, China;
机译:高温AlGaN缓冲层厚度对在Si(111)衬底上生长的GaN外延层的影响
机译:AlN缓冲层厚度对AlGaN夹层在Si(111)衬底上生长的GaN外延层结构性能的影响
机译:GaN缓冲层厚度对等离子辅助分子束外延技术在Si(111)衬底上生长的AlGaN / GaN基高电子迁移率晶体管结构的结构和光学性能的影响
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:使用不同缓冲层配置的200mm硅(111)衬底上的AlGaN / GaN高电子迁移率晶体管结构研究
机译:基于低温al / N和alGaN / GaN超晶格的GaN / si(111)外延层用于发光二极管
机译:在(00-1)蓝宝石,(100)和(111)硅衬底上生长的高质量aIN和GaN外延层