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Synthesis and thermal analysis of aluminium nitride filled epoxy composites and its effective application as thermal interface material for LED applications

机译:氮化铝填充的环氧复合材料的合成和热分析及其作为LED应用的热界面材料的有效应用

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摘要

The improvement of heat conduction in any electronic devices has become a predominant issue in which effective heat dissipation is crucial to enhance the performance of packaged devices. This paper elucidates the application of thermally conductive particles filled composites as thermal interface material for LEDs. Present work aims on reducing the junction temperature and thermal resistance of the device under test with heavily filled ceramic-epoxy composite as the interface material between the device and metal substrate. Silane treated aluminium nitride (AlN) powder was studied for its feasibility as the filler material. The thermal conductivity values obtained by hot disc method (ISO/DIS 22007-2.2) were 0.66, 0.54 and 0.44 W/mK for 60, 50 and 40 wt% AlN filled epoxy composites respectively which were described well by thermal transient measurement of LEDs. The junction temperature and total thermal resistance of the thermal set up was reduced significantly with increased filler loading. The least junction to ambient thermal resistance (R_(thJ-A)) was achieved for 60 wt% followed by 50 and 40 wt% AlN filled TIM with the values of 24.8, 31.98 and 34.64 K/W respectively. Characteristics of the AlN filled composites for LED applications are discussed extensively in terms of thermogravimetric and thermo-mechanical analysis.
机译:在任何电子设备中,热传导的改善已经成为主要问题,其中有效散热对于提高封装设备的性能至关重要。本文阐明了导热颗粒填充的复合材料作为LED热界面材料的应用。当前的工作旨在降低被测设备的结温和热阻,该设备使用重填充的陶瓷-环氧树脂复合材料作为设备和金属基板之间的界面材料。研究了硅烷处理的氮化铝(AlN)粉末作为填充材料的可行性。通过热盘法(ISO / DIS 22007-2.2)获得的热导率值对于60、50和40重量%的AlN填充的环氧复合材料分别为0.66、0.54和0.44W / mK,这通过LED的热瞬态测量很好地描述。随着填料填充量的增加,热固结的结温和总热阻显着降低。 60%(重量)的最低结对环境热阻(R_(thJ-A))达到最高,然后是50%和40%(重量)的AlN填充TIM,其值分别为24.8、31.98和34.64 K / W。从热重分析和热机械分析方面广泛讨论了用于LED的AlN填充复合材料的特性。

著录项

  • 来源
    《Journal of materials science》 |2014年第11期|4814-4821|共8页
  • 作者单位

    Nano Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia;

    Nano Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia;

    OSRAM Opto Semiconductors (Malaysia), Sdn. Bhd., Bayan Lepas Free Industrial Zone Phase 1, 11900 Bayan Lepas, Penang, Malaysia;

    OSRAM Opto Semiconductors GmbH, Leibnizstr.4, 93055 Regensburg, Germany;

    OSRAM Opto Semiconductors (Malaysia), Sdn. Bhd., Bayan Lepas Free Industrial Zone Phase 1, 11900 Bayan Lepas, Penang, Malaysia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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