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首页> 外文期刊>Journal of materials science >Growth and characterization of La_(5/8)Sr_(3/8)MnO_3 thin films prepared by pulsed laser deposition on different substrates
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Growth and characterization of La_(5/8)Sr_(3/8)MnO_3 thin films prepared by pulsed laser deposition on different substrates

机译:通过在不同基板上脉冲激光沉积制备的La_(5/8)Sr_(3/8)MnO_3薄膜的生长和表征

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摘要

Colossal magnetoresistance La_(5/8)Sr_(3/8)MnO_3 (LSMO) thin films were directly grown on MgO(100), Si(100) wafer and glass substrates by pulsed laser deposition technique. The films were characterized using X-ray diffraction (XRD), field emission-scanning electron microscope and atomic force microscopy (AFM). The electrical and magnetic properties of the films are studied. From the XRD patterns, the films are found to be poly-crystalline single-phases. The surface appears porous and cauliflower-like morphology for all LSMO films. From AFM images, the LSMO films deposited on glass substrate were presented smooth morphologies of the top surfaces as comparing with the films were deposited on Si(100) and MgO(100). The highest magnetoresistance (MR) value obtained was -17.21 % for LSMO/MgO film followed by -15.65 % for LSMO/Si and -14.60 % for LSMO/Cg films at 80 K in a IT magnetic field. Phase transition temperature (T_P) is 224 K for LSMO/MgO, 200 K for LSMO/Si and above room temperature for films deposited on glass substrates. The films exhibit ferromagnetic transition at a temperature (T_C) around 363 K for LSMO/MgO, 307 K for LSMO/Si and 352 K for LSMO/Cg thin film. T_C such as 363 and 352 K are the high T_C that has ever been reported for LSMO films deposited on MgO substrate with high lattice mismatch parameter and glass substrates with amorphous nature.
机译:通过脉冲激光沉积技术在MgO(100),Si(100)晶片和玻璃基板上直接生长巨大的磁阻La_(5/8)Sr_(3/8)MnO_3(LSMO)薄膜。使用X射线衍射(XRD),场发射扫描电子显微镜和原子力显微镜(AFM)对薄膜进行表征。研究了薄膜的电和磁性能。从XRD图样,发现膜是多晶单相。对于所有LSMO膜,表面均呈现多孔状和花椰菜状的形态。从AFM图像来看,与沉积在Si(100)和MgO(100)上的薄膜相比,沉积在玻璃基板上的LSMO薄膜呈现出顶部表面的平滑形态。在IT磁场中,LSMO / MgO膜在80 K时获得的最高磁阻(MR)值为-17.21%,其后为LSMO / Si的为-15.65%和LSMO / Cg的为-14.60%。对于LSMO / MgO,相变温度(T_P)为224 K,对于LSMO / Si为200 K,对于沉积在玻璃基板上的薄膜,则为室温以上。薄膜在LSMO / MgO的363 K,LSMO / Si的307 K和LSMO / Cg薄膜的352 K的温度(T_C)下表现出铁磁跃迁。诸如363和352 K的T_C是沉积在具有高晶格失配参数的MgO基板和具有非晶性质的玻璃基板上的LSMO膜的高T_C。

著录项

  • 来源
    《Journal of materials science》 |2014年第3期|1317-1324|共8页
  • 作者单位

    Department of Physics, Faculty of Science, University Putra Malaysia (UPM), 43400 Serdang, Selangor, Malaysia;

    Department of Physics, Faculty of Science, University Putra Malaysia (UPM), 43400 Serdang, Selangor, Malaysia;

    Department of Physics, Faculty of Science, University Putra Malaysia (UPM), 43400 Serdang, Selangor, Malaysia;

    Department of Physics, Faculty of Science, University Putra Malaysia (UPM), 43400 Serdang, Selangor, Malaysia;

    Department of Physics, Faculty of Science, University Putra Malaysia (UPM), 43400 Serdang, Selangor, Malaysia;

    Department of Physics, Faculty of Science, University Putra Malaysia (UPM), 43400 Serdang, Selangor, Malaysia;

    Department of Physics, Faculty of Science, University Putra Malaysia (UPM), 43400 Serdang, Selangor, Malaysia;

    Department of Physics, Faculty of Science, University Putra Malaysia (UPM), 43400 Serdang, Selangor, Malaysia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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