Growth and characterization of wide-gap semiconducting oxide and chalcogenide thin films by pulsed laser deposition.

摘要

The preparation and characterization of thin film oxides and chalcogenides by pulsed laser deposition (PLD) is presented. An overview of fundamental PLD concepts are presented and are followed by a description implementation and development of the PLD systems at OSU. We present the results of thin film growth of high electron mobility In2O3:W in which we have prepared films exhibiting □ > 100 cm2/Vs on vitreous SiO2 substrates. The growth of Cu3TaQ 4 (Q = S, Se) films is outlined as a two step process consisting of PLD of ceramic targets followed by ex-situ annealing in chalcogenide vapor. Also, BiCuOSe thin films have been prepared in-situ and exhibit a high hole mobility up to 4 cm2/Vs. A discussion of their electronic structure is presented which explains the nature of the low band gap energy on the basis of deep Bi 6p level at the conduction band minimum. Finally, the results of BaBiO3 thin film preparation are presented in which both polycrystalline and highly (00l) oriented samples were grown.