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Structural, microstructural, optical and electrical properties of spray deposited rare-earth metal (Sm) ions doped CdO thin films

机译:喷涂沉积稀土金属(Sm)离子掺杂的CdO薄膜的结构,微结构,光学和电学性质

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摘要

Rare-earth metal, samarium (Sm) ions, doped cadmium oxide (CdO) thin films were deposited on microscopic glass substrates at 300 ℃ by a homemade spray pyrolysis experimental setup. The deposited films were characterized for their structural, microstructural, optical and electrical properties. X-ray diffraction analysis confirmed that the deposited films belong to the cubic crystal system. The undoped films show a slight preferential growth along (111) diffraction plane, and the (200) plane emerged as the preferential growth direction when the Sm-doping is higher than 0.75 wt%. Field emission scanning electron microscopy analysis reveals that the average grain size and surface morphology of CdO films are effectively modified by various Sm-doping concentration. The elemental composition of the deposited films was analyzed using energy dispersive spectroscopy. The metal oxide (Cd-O) bond vibrations were observed at 319, 389, 551,779 and 941 cm~(-1) by micro-Raman studies at room temperature. Oxidation state of Sm~(3+) was confirmed by X-ray photoelectron spectroscopy analysis. A transmit-tance (ranging 83-86 %) in the visible and NIR region was observed for the various Sm concentrations. The optical band gap estimated varies between 2.39 and 2.67 eV, depending on the Sm-doping concentration. The negative sign of Hall coefficient confirmed the n-type conductivity and the mobility and carrier concentration are in the 45-78 cm~2/V s, and 1.0 × 10~(20)-3.36 × 10~(20) cm~(-3) range respectively.
机译:通过自制的喷雾热解实验装置,在300℃下将稀土金属,sa(Sm)离子,掺杂的氧化镉(CdO)薄膜沉积在微玻璃基板上。所沉积的膜的结构,微结构,光学和电学性质被表征。 X射线衍射分析证实,沉积的膜属于立方晶系。当Sm掺杂量大于0.75 wt%时,未掺杂的薄膜沿(111)衍射面显示出轻微的优先生长,并且(200)面作为优先生长方向出现。场发射扫描电子显微镜分析表明,CdO薄膜的平均晶粒尺寸和表面形态可以通过不同的Sm掺杂浓度有效地改变。使用能量色散光谱法分析沉积膜的元素组成。室温下通过微拉曼研究在319、389、551,779和941 cm〜(-1)处观察到金属氧化物(Cd-O)键的振动。 X射线光电子能谱分析证实了Sm〜(3+)的氧化态。对于各种Sm浓度,在可见光和NIR区域观察到透射率(范围为83-86%)。估计的光学带隙在2.39和2.67 eV之间变化,具体取决于Sm掺杂浓度。霍尔系数的负号确认了n型电导率,迁移率和载流子浓度在45-78 cm〜2 / V s和1.0×10〜(20)-3.36×10〜(20)cm〜( -3)范围。

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  • 来源
    《Journal of materials science》 |2015年第6期|4152-4164|共13页
  • 作者单位

    Crystal Growth and Thin Film Laboratory, Department of Physics, Bharathidasan University, Tiruchirappalli 620024, Tamil Nadu, India;

    Crystal Growth and Thin Film Laboratory, Department of Physics, Bharathidasan University, Tiruchirappalli 620024, Tamil Nadu, India;

    Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur 603 203, Tamil Nadu, India;

    Nano-Optics and Optoelectronic (NOOR) Laboratory, i-Micro, EECS Department, Masdar Institute, 54224 Abu Dhabi, United Arab Emirates;

    Nano-Optics and Optoelectronic (NOOR) Laboratory, i-Micro, EECS Department, Masdar Institute, 54224 Abu Dhabi, United Arab Emirates;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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