机译:通过等离子增强化学气相沉积直接在Si衬底上无氢合成石墨烯-石墨薄膜
SHU-SolarE R&D Lab, Department of Physics, Shanghai University, Shanghai 200444, China;
SHU-SolarE R&D Lab, Department of Physics, Shanghai University, Shanghai 200444, China;
SHU-SolarE R&D Lab, Department of Physics, Shanghai University, Shanghai 200444, China;
SHU-SolarE R&D Lab, Department of Physics, Shanghai University, Shanghai 200444, China;
SHU-SolarE R&D Lab, Department of Physics, Shanghai University, Shanghai 200444, China;
SHU-SolarE R&D Lab, Department of Physics, Shanghai University, Shanghai 200444, China;
SHU-SolarE R&D Lab, Department of Physics, Shanghai University, Shanghai 200444, China,Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444, China;
机译:等离子体增强化学气相沉积法在不同基材上无氢合成几层石墨烯薄膜
机译:等离子体增强化学气相沉积法直接在塑料基底上低温合成大型二硫化钼薄膜
机译:在低基板温度下通过等离子体增强化学气相沉积和热线化学气相沉积沉积的薄膜的机械和压阻特性
机译:6.2:通过使用等离子体化学气相沉积沉积的无氢类金刚石碳膜来增强场发射特性
机译:通过等离子增强化学气相沉积在聚合物基材上沉积无机薄膜。
机译:射频等离子体增强化学气相沉积(RF PECVD)反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
机译:通过化学气相沉积途径简单地合成介电基板上的大面积多层石墨烯薄膜(通过CVD途径合成介电基板上的MLG薄膜)