机译:等离子体增强化学气相沉积法直接在塑料基底上低温合成大型二硫化钼薄膜
Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, Gyeonggi Do, South Korea;
Sungkyunkwan Univ, Sch Mech Engn, Suwon 440746, Gyeonggi Do, South Korea;
Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, Gyeonggi Do, South Korea;
Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, Gyeonggi Do, South Korea;
Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, Gyeonggi Do, South Korea;
Ulsan Natl Inst Sci & Technol UNIST, Sch Mat Sci & Engn, Ulsan 689798, South Korea;
Ulsan Natl Inst Sci & Technol UNIST, Sch Mat Sci & Engn, Ulsan 689798, South Korea;
Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, Gyeonggi Do, South Korea|Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, Gyeonggi Do, South Korea;
Samsung Elect, Semicond R&D Ctr, Hwaseong 445701, Gyeonggi Do, South Korea;
Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, Gyeonggi Do, South Korea;
Sungkyunkwan Univ, Sch Mech Engn, Suwon 440746, Gyeonggi Do, South Korea;
Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, Gyeonggi Do, South Korea|Sungkyunkwan Univ, Sch Mech Engn, Suwon 440746, Gyeonggi Do, South Korea;
Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, Gyeonggi Do, South Korea|Sungkyunkwan Univ, Sch Mech Engn, Suwon 440746, Gyeonggi Do, South Korea;
flexible sensor; low temperature; molybdenum disulfide (MoS2); plasma-enhanced chemical vapor deposition (PECVD); plastic substrate;
机译:在低基板温度下通过等离子体增强化学气相沉积和热线化学气相沉积沉积的薄膜的机械和压阻特性
机译:脉冲非常高频率等离子体增强硅膜的化学气相沉积,用于低温(120℃)薄膜晶体管
机译:低温多晶硅薄膜传输器制造中通过等离子体化学气相沉积法沉积的Si和SiO_2膜中铝的偏析
机译:用于晶体光伏太阳能电池的柔性多晶金属基板上的异质外延硅薄膜:物理气相沉积与等离子体增强化学气相沉积之间的比较
机译:通过等离子增强化学气相沉积在聚合物基材上沉积无机薄膜。
机译:化学气相沉积法控制大规模合成中二硫化钼的成核密度
机译:低温热氧化物到等离子增强化学气相沉积氧化物晶片的键合,用于薄膜转移应用