Effect of sintering temperature on microstructures and microwave dielectric properties of Ba_2MgWO_6 ceramics

摘要

The microwave dielectric properties of Ba_2-MgWO_6 ceramics were investigated with a view to the use of such ceramics in mobile communication. Ba_2MgWO_6 ceramics were prepared using the conventional solid-state method with various sintering temperatures. Dielectric constants (ε_r) of 16.8-18.2 and unloaded quality factor (Q_u × f) of 7000-118,200 GHz were obtained at sintering temperatures in the range 1450-1650 ℃ for 2 h. A maximum apparent density of 6.76 g/cm~3 was obtained for Ba_2MgWO_6 ceramic, sintered at 1650 ℃ for 2 h. A dielectric constant (ε_r) of 18.4, an unloaded quality factor (Q_u × f) of 118, 200 GHz, and a temperature coefficient of resonant frequency (τ_f) of -34 ppm/℃ were obtained when Ba_2MgWO_6 ceramics were sintered at 1650 ℃ for 2h.