Optimization of the annealing process and nanoscale piezoelectric properties of (002) AlN thin films

摘要

In this paper, the effects of different annealing processes on the texture, surface morphology, and piezoelectric properties of aluminum nitride (AlN) thin films and the performance of AlN-based surface acoustic wave (SAW) devices were systematically investigated. Based on the crystallinity and the morphology results, it is evident that in-situ annealing method is superior to ex-situ annealing. For the A1N thin films, the crystallization and piezoelectricity were both enhanced and then receded as the annealing temperature increased from 300 to 600 ℃. We demonstrated that good (002) orientation, excellent grain distribution and high relative piezoelectric coefficient of the AlN thin films were achieved via in-situ annealing at 500 ℃. Meanwhile, the AlN thin films exhibited excellent polarization properties and polarization maintaining characteristics. Additionally, the uniform interdigital transducer (IDT) with 8 μm period (finger width = 2 μm) were designed and the IDT/AlN/SiO_2/Si SAW devices with the center frequency f_0 of 495 MHz and insert loss of -24.1 dB were fabricated.