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首页> 外文期刊>Journal of materials science >Behavior of eutectic Sn-Bi powder in Cu nanoparticle joints during the thermal treatment
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Behavior of eutectic Sn-Bi powder in Cu nanoparticle joints during the thermal treatment

机译:共晶Sn-Bi粉末在热处理过程中在Cu纳米粒子接头中的行为

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摘要

Ni-coated SiC chips and Cu substrates were joined by a paste of Cu nanoparticles and eutectic Sn-Bi powders as an alternative joint to conventional solders. The first thermal treatment of the joint was performed to melt eutectic Sn-Bi powders, while the second thermal treatment was conducted at 623 K for 5 min to eliminate the organic molecules around the Cu nanoparticles. The influence of the first thermal treatment conditions (423-473 K for 2-20 min) on the joint structure and strength was investigated. During the first thermal treatment conducted at 423 K for 20 min, or at 473 K for 2 min, Sn-Bi did not migrate to the nanoparticle area. During the second thermal treatment, Bi liquefied, migrated out of the powder, and segregated at the joint interfaces. This resulted in the formation of brittle interfaces and consequently a low bonding strength. In contrast, when the first thermal treatment was performed at 448 K for 20 min or 473 K for more than 5 min, liquefied Sn-Bi migrated out of the powder and segregated at the joint interfaces, where Bi subsequently reacted with the Ni layer at the interface to form Bi_xNi_y intermetallic compounds, which prevented the formation of a brittle interface and thus improved the bonding strength.
机译:镀镍的SiC芯片和铜基板通过铜纳米颗粒和共晶Sn-Bi粉末的糊状物连接在一起,作为传统焊料的替代接头。进行接头的第一次热处理以熔化共晶Sn-Bi粉末,而第二次热处理在623 K进行5分钟以消除Cu纳米粒子周围的有机分子。研究了第一热处理条件(423-473 K,持续2-20分钟)对接头结构和强度的影响。在以423 K进行20分钟或以473 K进行2分钟的第一次热处理过程中,Sn-Bi不会迁移到纳米颗粒区域。在第二次热处理期间,Bi液化,从粉末中迁移出来,并在接头界面处偏析。这导致脆性界面的形成,并因此导致低的结合强度。相反,当第一次热处理在448 K下进行20分钟或在473 K下进行超过5分钟时,液化的Sn-Bi从粉末中迁移出并在接合界面处偏析,随后Bi与Ni的Ni层反应。界面形成Bi_xNi_y金属间化合物,阻止了脆性界面的形成,从而提高了结合强度。

著录项

  • 来源
    《Journal of materials science 》 |2017年第12期| 8764-8770| 共7页
  • 作者单位

    Toyota Central R&D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan;

    Toyota Central R&D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan;

    Toyota Central R&D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan;

    Toyota Central R&D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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