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机译:在具有SrTiO_3 / TiN缓冲层的(0002)GaN衬底上外延生长(111)BaTiO_3薄膜
Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, 19A Yuquan Rd, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China;
机译:具有单晶胞TiN缓冲层的纤锌矿(0002)GaN上钙钛矿(111)SrTiO_3的外延生长机理
机译:在具有La_(0.5)Sr_(0.5)CoO_3 / TiO_2缓冲层的GaN(0002)上外延集成0.7Pb(Mg_(1/3)Nb_(2/3))O_3-0.3PbTiO_3(111)薄膜
机译:TiO_2缓冲层厚度对在GaN上生长的SrTiO_3(111)外延膜的影响(0002)
机译:在SRTIO_3衬底上的YBA_2CU_3O_7薄膜中外延生长机制诱导的界面缺陷:在薄膜双晶和多层的应用
机译:通过异质外延GaN薄膜中的缓冲层控制应力和缺陷
机译:简单Sol-Gel法在SrTiO3(111)衬底上正交生长GaFeO3薄膜的外延生长
机译:6H-SiC(0001)和Si(111)衬底上GaN和Algan合金薄膜的pendeo-Xizaial生长和表征。