A Comparative Study of Boron an Phosphorus Doping Effects in SiC: H Films Prepared by ECR-CVD

摘要

Hydrogenated silicon carbide films (SiC:H) were deposited using the electron cyclotron resonance chemical vapour deposition (ECR-CVD) technique from a mixture of methane, silane and hydro- gen, and using diborane and phosphine as doping gases. The effects of changes in the microwave power on the deposition rate and optical bandgap were studied in conjunction with film analysis using and dark-conductivities and activation energy were studied in conjunction with film analysis using the Raman scattering technique.