Electron microscopy studies of undoped and phosphorus doped Si:H and Si,C:H films.

摘要

Microstructure of undoped and phosphorus doped Si:H and Si,C:H films was analyzed by selected-area diffraction, conical dark-field imaging, energy-dispersive x-ray spectroscopy, and electron energy-loss spectroscopy in transmission electron microscopes. Thin films were synthesized by remote plasma-enhanced chemical vapor deposition and characterized in terms of degree of crystallinity. Distribution of phosphorus in Si:H and Si,C:H films, and of carbon in Si,C:H films was evaluated. Results indicate that (i) the microstructure of a film may be two phase, consisting of silicon microcrystallites in an amorphous matrix, (ii) phosphorus doping as well as the presence of carbon influences the degree of crystallinity by reducing the average size and volume fraction of microcrystallites, (iii) the presence of carbon and phosphorus doping completely suppresses the crystalline phase, (iv) phosphorus is distributed at approximately the same concentration in both the crystalline and amorphous phases of diphasic films, and (v) carbon is detected in the amorphous phase of the Si,C:H films.