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Boron-doped SIC copper diffusion barrier films
Boron-doped SIC copper diffusion barrier films
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机译:掺硼SIC铜扩散阻挡膜
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摘要
Copper diffusion barrier films having a boron-doped silicon carbide layer with at least 25% boron by atomic weight of the layer composition have advantages for semiconductor device integration schemes. The films have an integration worthy etch selectivity to carbon doped oxide of at least 10 to 1, can adhere to copper with an adhesion energy of at least 20 J/m2, and can maintain an effective dielectric constant of less than 4.5 in the presence of atmospheric moisture. The films are suitable for use in a wide range of VLSI and ULSI structures and devices.
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机译:具有硼掺杂的碳化硅层的铜扩散阻挡膜对于半导体器件集成方案具有优势,该硼掺杂的碳化硅层具有按层组成的原子重量计至少25%的硼。薄膜具有对碳掺杂氧化物至少10到1的刻蚀选择性,可以以至少20 J / m 2 Sup>的粘附能粘附到铜上,并且可以保持有效的介电常数在大气湿度下小于4.5。该膜适用于各种VLSI和ULSI结构和器件。
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