Effects of Substrate Temperature on Properties for Transparent Conducting ZnO: Al Films on Organic Substrate Deposited by r. f. Sputtering

摘要

This paper presents the substrate temperature dependence of opto-electrical properties for trans- parent conducting Al-doped ZnO films prepared on polyisocyanate (Pl) substrates by r. f. sputter- ing. Polycrystalline ZnO: Al films with good adherence to the substrates having a (0020 preferred orientation have been obtained with resistivities in the range from 4.1×10~-3 to 5.3×10~-4 Ω·cm, carrier densities more than 2.6×10~20 cm~-3 and Hall mobilities between 5.78 and 13.11 cm~2/V/s for films. The average transmittance reaches 75/100 in the visible spectrum. The quality of obtained films depends on substrate temperature during films fabrtication.