Dose-window dependence on Si crystal orientation in separation by implanted oxygen substrate formation

摘要

Separation by implemented oxygen (SIMOX)(111) substrates have been formed by oxygen-ion (~(16)O~+) implantation into Si(111), showing that a so-called "dose-window" at ~(16)O~+-implantation into Si differs from Si(100) to Si(111). In SIMOX(100), an oxygen dose of 4 X 10~(17)/cm~2 into Si(100) is widely recognized as the dose-window when the acceleration energy is 180 keV. For the first time, our work shows that an oxygen dose of 5 X 10~(17)/cm~2 into Si(111) is the dose-window for the formation of SIMOX(111) substrates when the acceleration energy is 180 keV. The difference between dose-windows is caused by anisotropy of the crystal orientation during growth of the faceted buried SiO2. We also numerically analyzed the data at different oxidation velocities for each facet of the polyhedral SiO_2 islands. Numerical analysis results show good agreement with the experimental data.