首页> 外文期刊>Journal of Materials Research >Nonlinear optical properties of Bi^sLai.osTiNbC^ ferroelectric film grown on fused quartz substrates by PLD
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Nonlinear optical properties of Bi^sLai.osTiNbC^ ferroelectric film grown on fused quartz substrates by PLD

机译:PLD在熔融石英衬底上生长的Bi ^ sLai.osTiNbC ^铁电薄膜的非线性光学性质

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摘要

Bi| g^Lai osTiNbOg (BLTN-1.05) thin films were prepared on fused quartz substrates by pulsed laser deposition. The x-ray diffraction (XRD) analysis and atomic force microscope (AFM) surface morphology measurements were performed on the samples. The XRD pattern demonstrated that the films are single-phase perovskite structured and well crystallized. The AFM analysis indicated that the films have less rough surface. The fundamental optical constants were obtained through optical transmittance measurements. The nonlinear optical properties of BLTN thin films were measured by a single beam Z-scan technique under 1064 nm excitation. The real and imaginary parts of the third-order nonlinear optical susceptibility %(3> of the film were measured to be 9.56 x 10~9 and -3.67 x 10~9 esu, respectively. The Z-scan results show that BLTN thin films have potential applications in nonlinear optics.
机译:Bi |通过脉冲激光沉积在熔融石英基底上制备了g lai osTiNbOg(BLTN-1.05)薄膜。对样品进行了X射线衍射(XRD)分析和原子力显微镜(AFM)表面形态测量。 XRD图谱表明该膜是单相钙钛矿结构且结晶良好。原子力显微镜的分析表明,薄膜的粗糙表面较少。通过光学透射率测量获得基本光学常数。 BLTN薄膜的非线性光学性质是通过单束Z扫描技术在1064 nm激发下测量的。薄膜的三阶非线性光学磁化率%(3>)的实部和虚部分别为9.56 x 10〜9和-3.67 x 10〜9 esu,Z扫描结果表明BLTN薄膜在非线性光学中有潜在的应用。

著录项

  • 来源
    《Journal of Materials Research》 |2011年第9期|p.1159-1163|共5页
  • 作者

    Zhuoyu Huo; Junhe Han; Yuzong Gu;

  • 作者单位

    Institute of Micro-system Physics, Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics & Electronics, Henan University, Kaifeng 475004, People's Republic of China;

    Institute of Micro-system Physics, Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics & Electronics, Henan University, Kaifeng 475004, People's Republic of China;

    Institute of Micro-system Physics, Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics & Electronics, Henan University, Kaifeng 475004, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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